- Introduction to Semiconductor Devices and Circuits
- Lecture Schedules:
- THA (Tue/Thu, 7:00am-8:00am, Rm 120)
- THR (Tue/Thu, 8:30am-9:30am, Rm 120)
- WFD (Wed/Fri, 10:00am-11:00am, Rm 120)
Announcements
- 8/4: Welcome to EEE 41!
- 8/4: This term we will be using Piazza for class discussion. The system is highly catered to getting you help fast and efficiently from classmates, in addition to the instructors. Rather than emailing questions to the teaching staff, we encourage you to post your questions on Piazza. Find our class page here.
- 9/22: Please note the following schedule of DC #6 make-up classes for students with Friday DCs:
- Sept 28, Monday, 9-10 am, Rm 422
- Sept 28, Monday, 1-2 pm, Rm 422
- Sept 28, Monday, 2-3 pm, Rm 422
- Sept 28, Monday, 4-5 pm, Rm 422
- 10/3: Due to the suspension of classes yesterday, another set of make-up classes will be given on Monday, Oct 5, for the Friday DCs. The schedule is the same as shown above.
- 10/3: Problem Set 1; The deadline is on Oct. 13, Tuesday, 11AM.
- 10/5: All make-up DC#7 classes today will be held in Room 229.
- 10/5: All DC classes will have the Long Quiz #1 this week.
- 10/15: There will be classes today.
- Midterm Exam Solutions:
- 10/23: Grade sheet can be found here.
- 10/30: Because of the class suspensions this afternoon, there will be make-up DC#9 classes on the following schedule:
- Nov 4, Wednesday, 5:30-6:30pm, Rm 422
- Nov 5, Thursday, 4-5pm, Rm 307
- 11/11: WFD will have a make-up class on November 23, Monday, 4-6pm, at LC2.
- 11/18: All DC sections will have their long quiz next week, Nov. 24 – 27.
- 11/22: The scheduled make-up class tomorrow for WFD will be postponed to next week. Keep posted for announcements.
- 11/23: THA make-up class on 11/23 (Monday) is at 4-5:30pm, Rm 120.
- 11/23: Please note that we are changing access permissions on the grade sheet whenever we are doing updates.
- 11/26: THA make-up class on 12/1 (Tuesday), 4-5:30pm, room to be announced.
- 11/27: WFD make-up class on 12/2 (Wednesday), 10-11:30am, Rm 120.
- 12/15: Finals solution
- 12/17: The passing grade for EEE 41 is 45. The grades breakdown is as follows: x >=66 (1.0), 61 <= x < 66 (1.5), 56 <= x <61 (2.0), 49 <= x < 56 (2.5), 45 <= x < 49 (3.0), 40 <= x < 45 (4.0), x < 40 (5.0). The removal exam will be on January 5, 2016. Time and venue TBA.
- 12/17: You can still claim your papers at Rm 401. Returning of papers for rechecking of Midterms Part 1 and Finals is extended to December 18. Again, just place your exam papers in the box at Rm 401 with a note explaining your case. Do not reason out based on your current class standing. Also, the process is not iterative, i.e. you cannot have your papers rechecked again. Parts 2, 3, and 4 of the Midterms will not be accepted for rechecking.
- 12/21: The instructors have already finished rechecking and the results are already reflected on the aggregated grade sheet (see the Dec21 tab). Just check whether your grades changed or not. For everyone, please have one last check on your grades. Inform us of any error before December 22, 12nn. We will be uploading the grades on CRS after.
- 12/24: Removal exam is moved to morning of January 11, 2016. Exact time and venue is still TBA. Students are still allowed to bring their cheat sheet (1 page A4, back-to-back). Please wait for further announcements regarding the removals slip.
- 1/5: Removal exam is moved to January 12, 2016. Exact time and venue is still TBA. Please wait for further announcements regarding the removals slip.
- 1/6: Removal exam is from 9am to 12nn. We will just post an announcement at the lobby regarding the venue on the exam day itself. No need to worry regarding the removals slip. We are already arranging the matter. Just come on the exam day.
Exam Dates
- First Exam: Saturday, October 17, 2015, 1:00pm – 4:00pm
- Final Exam: Friday, December 11, 2015, 1:00pm – 4:00pm
- Removal Exam:
Monday, January 11, 2016, (morning)Tuesday, January 12, 2016, 9:00am – 12:00nn
Class Lectures
| Date | Title | Slides | |
|---|---|---|---|
| 1 | 8/4 | Introduction | |
| Semiconductor Fundamentals (3 weeks) | |||
| 2 | 8/6 | Semiconductor materials; Si structure; Electrons and holes | |
| 3 | 8/11 | Energy-band model; Band-gap energy; Density of states; Doping | |
| 4 | 8/13 | Thermal equilibrium; Carrier distributions and Concentrations; Determination of the Fermi Energy | |
| 5 | 8/18 | Carrier properties and drift; Carrier scattering; Drift current; Resistivity | |
| 6 | 8/20 | Electrostatic potential; Carrier diffusion; Generation and recombination | |
| 7 | 8/25 | Generation and recombination; Excess carrier concentrations; Minority Carrier Lifetime | |
| 8 | 8/27 | Minority carrier lifetime; Continuity equations; Minority carrier diffusion; Quasi-Fermi levels | |
| Metal-Semiconductor Contacts (1 week) | |||
| 9 | 9/1 | Work function; metal-semiconductor band diagram; depletion width | |
| 10 | 9/3 | I-V characteristics; Practical ohmic contacts; small-signal capacitance | |
| PN Junction Diodes (3 weeks) | |||
| 11 | 9/8 | Electrostatics | |
| 12 | 9/10 | I-V characteristics | |
| 13 | 9/15 | Reverse-bias current; reverse-bias breakdown | |
| 14 | 9/17 | Deviations from the ideal: R-G current, series resistance, high-level injection; narrow-base diode | |
| 15 | 9/22 | Charge control model; Small-signal model; transient response: turn-off | |
| 16 | 9/24 | Transient response: turn-on; diode applications | |
| 17 | 9/29 | Review | |
| Bipolar Junction Transistors (3 weeks) | |||
| 18 | 10/1 | Introduction; BJT fundamentals | |
| 19 | 10/6 | Ideal transistor analysis; Ebers-Moll model | |
| 20 | 10/8 | Deviations from the ideal; Gummel plot; Modern BJT structures | |
| 21 | 10/13 | Charge control model; base transit time; Small signal model | |
| 10/15 | |||
| 22 | 10/20 | Cutoff frequency; transient response | |
| 23 | 10/22 | PNPN devices | |
| Metal Oxide Semiconductor (MOS) Capacitors (1 week) | |||
| 24 | 10/27 | MOS Structure; energy band diagram; Electrostatics | |
| 25 | 10/29 | Capacitance vs. voltage characteristic | |
| Metal Oxide Semiconductor (MOS) Field-Effect Transistors (FETs) (3 weeks) | |||
| 26 | 11/3 | MOSFET structure and operation; Qualitative theory; long-channel I-V characteristics | |
| 27 | 11/5 | Modified long-channel I-V characteristics; Body effect parameter; PMOS I-V; small-signal model | |
| 28 | 11/10 | Body effect parameter; PMOS I-V; small-signal model | |
| 29 | 11/12 | Sub-threshold leakage current; gate-length scaling; Velocity saturation | |
| 30 | 11/17 | Short-channel effect; source/drain structure; drain-induced barrier lowering; excess current effects | |
| 31 | 11/19 | IC technology; MOSFET fabrication process; CMOS latch-up | |
| 32 | 11/24 | Review | |
| 33 | 11/26 | Review |
Discussion Class Slides and Homework
| Title | Slides (no solution) | Slides (w/solution) | Quiz (w/ sol'n) | |
|---|---|---|---|---|
| 00 | Class Policies | |||
| 01 | Electromagnetics Review & Crystal Lattice Structures | |||
| 02 | Energy Band Model and Carrier Concentration | |||
| 03 | Resistivity, Carrier Drift and Diffusion | |||
| EEE 42 Lab 3 Solutions | ||||
| 04 | Continuity Equations | |||
| 05 | MS Junction Electrostatics | |||
| 06 | MS Junction Small-Signal and PN Electrostatics | |||
| 07 | PN Electrostatics and I-V | |||
| Long Quiz 1 | ||||
| Problem Set | ||||
| 08 | PN Small-signal and Transient Response | |||
| 09 | BJT Performance Parameters and Biasing | |||
| 10 | Ebers-Moll Model and BJT Non-idealities | |||
| 11 | BJT Small-signal Analysis and MOS Capacitors | |||
| 12 | MOS C-V and MOSFET I-V | |||
| Long Quiz 2 |
Textbook
- Semiconductor Device Fundamentals by R. F. Pierret (Addison Wesley, 1996)
References
- Solid State Electronic Devices by B. G. Streetman & S. Banerjee (Prentice Hall, 2000)
- Fundamentals of Modern VLSI Devices by Y. Taur & T. H. Ning (Cambridge University Press, 1998)
- Semiconductor Devices by K. Kano (Prentice Hall, 1998)
- Introduction to Semiconductor Devices and Circuits, 2nd ed., by L. Sison (U.P. Press, 2008)