| 1 | 8/9 | Introduction | pdf |
| | Semiconductor Fundamentals (3 weeks) | |
| 2 | 8/11 | Semiconductor materials; Si structure; Electrons and holes | pdf |
| 3 | 8/16 | Energy-band model; Band-gap energy; Density of states; Doping | pdf |
| 4 | 8/18 | Thermal equilibrium; Carrier distributions and Concentrations; Determination of the Fermi Energy | pdf |
| 5 | 8/23 | Carrier properties and drift; Carrier scattering; Drift current; Resistivity | pdf |
| 6 | 8/25 | Electrostatic potential; Carrier diffusion; Generation and recombination | pdf |
| 7 | 8/30 | Generation and recombination; Excess carrier concentrations; Minority Carrier Lifetime | pdf |
| 8 | 9/1 | Minority carrier lifetime; Continuity equations; Minority carrier diffusion; Quasi-Fermi levels | pdf |
| | Metal-Semiconductor Contacts (1 week) | |
| 9 | 9/6 | Work function; metal-semiconductor band diagram; depletion width | pdf |
| 10 | 9/8 | I-V characteristics; Practical ohmic contacts; small-signal capacitance | pdf |
| | PN Junction Diodes (3 weeks) | |
| 11 | 9/13 | Electrostatics | pdf |
| 12 | 9/15 | I-V characteristics | pdf |
| 13 | 9/20 | Reverse-bias current; reverse-bias breakdown | pdf |
| 14 | 9/22 | Deviations from the ideal: R-G current, series resistance, high-level injection; narrow-base diode | pdf |
| 15 | 9/27 | Charge control model; Small-signal model; transient response: turn-off | pdf |
| 16 | 9/29 | Transient response: turn-on; diode applications | pdf |
| 17 | 10/4 | Review | |
| | Bipolar Junction Transistors (3 weeks) | |
| 18 | 10/6 | Introduction; BJT fundamentals | pdf |
| 19 | 10/11 | Ideal transistor analysis; Ebers-Moll model | pdf |
| 20 | 10/13 | Deviations from the ideal; Gummel plot; Modern BJT structures | pdf |
| 21 | 10/18 | Charge control model; base transit time; Small signal model | pdf |
| 22 | 10/20 | Cutoff frequency; transient response | |
| 23 | 10/25 | PNPN devices | |
| | Metal Oxide Semiconductor (MOS) Capacitors (1 week) | |
| 24 | 10/27 | MOS Structure; energy band diagram; Electrostatics | |
| 25 | 11/1 | No class | |
| 26 | 11/3 | Capacitance vs. voltage characteristic | |
| | Metal Oxide Semiconductor (MOS) Field-Effect Transistors (FETs) (3 weeks) | |
| 27 | 11/8 | MOSFET structure and operation; Qualitative theory; long-channel I-V characteristics | |
| 28 | 11/10 | Modified long-channel I-V characteristics; Body effect parameter; PMOS I-V; small-signal model | |
| 29 | 11/15 | Body effect parameter; PMOS I-V; small-signal model | |
| 30 | 11/17 | Sub-threshold leakage current; gate-length scaling; Velocity saturation | |
| 31 | 11/22 | Short-channel effect; source/drain structure; drain-induced barrier lowering; excess current effects | |
| 32 | 11/24 | IC technology; MOSFET fabrication process; CMOS latch-up | |
| 33 | 11/29 | Review | |
| 34 | 12/1 | Review | |
