- Introduction to Semiconductor Devices and Circuits
- Lecture Schedules:
- THA (Tue/Thu, 7:00am-8:00am)
- THR (Tue/Thu, 8:30am-9:30am)
- WFD (Wed/Fri, 10:00am-11:00am)
Announcements
- 1/4 (9:45AM): Those who have a grade of 55 and above (after rounding up) will pass the course. Those who have a grade of 50 to 54 will take a removal exam. Please note of the schedule:
- Jan 10, 5PM: Deadline for rechecking of final exam
- Jan 11, 8AM: Removal exam
- Jan 11, evening: Release of results of removal exam
- 12/22: DC standings for Densing’s classes here.
- 12/21: Finals Answer Key (Parts 2 and 3) Part 1
- 12/7: Midterm Exam results for Densing’s DC classes here. Exam papers may also be claimed at room 409.
- 10/15: First Exam Solutions: Part I Part II Part III
- Part I B3: EBD plot of GaAs should have Ef 0.64 eV below Ei.
- 8/26: Starting Aug 30, all EEE 41 classes will be held in the original assigned rooms (LC1 for THQ and THR, LC2 for WFD).
- 8/8: Welcome to EEE 41!
Exam Dates
- First Exam: Saturday, October 15, 2016, 1:00pm – 4:00pm
- Final Exam: Thursday, December 15, 2016, 1:00pm – 4:00pm
Class Lectures
| Date | Title | Slides | |
|---|---|---|---|
| 1 | 8/9 | Introduction | |
| Semiconductor Fundamentals (3 weeks) | |||
| 2 | 8/11 | Semiconductor materials; Si structure; Electrons and holes | |
| 3 | 8/16 | Energy-band model; Band-gap energy; Density of states; Doping | |
| 4 | 8/18 | Thermal equilibrium; Carrier distributions and Concentrations; Determination of the Fermi Energy | |
| 5 | 8/23 | Carrier properties and drift; Carrier scattering; Drift current; Resistivity | |
| 6 | 8/25 | Electrostatic potential; Carrier diffusion; Generation and recombination | |
| 7 | 8/30 | Generation and recombination; Excess carrier concentrations; Minority Carrier Lifetime | |
| 8 | 9/1 | Minority carrier lifetime; Continuity equations; Minority carrier diffusion; Quasi-Fermi levels | |
| Metal-Semiconductor Contacts (1 week) | |||
| 9 | 9/6 | Work function; metal-semiconductor band diagram; depletion width | |
| 10 | 9/8 | I-V characteristics; Practical ohmic contacts; small-signal capacitance | |
| PN Junction Diodes (3 weeks) | |||
| 11 | 9/13 | Electrostatics | |
| 12 | 9/15 | I-V characteristics | |
| 13 | 9/20 | Reverse-bias current; reverse-bias breakdown | |
| 14 | 9/22 | Deviations from the ideal: R-G current, series resistance, high-level injection; narrow-base diode | |
| 15 | 9/27 | Charge control model; Small-signal model; transient response: turn-off | |
| 16 | 9/29 | Transient response: turn-on; diode applications | |
| 17 | 10/4 | Review | |
| Bipolar Junction Transistors (3 weeks) | |||
| 18 | 10/6 | Introduction; BJT fundamentals | |
| 19 | 10/11 | Ideal transistor analysis; Ebers-Moll model | |
| 20 | 10/13 | Deviations from the ideal; Gummel plot; Modern BJT structures | |
| 21 | 10/18 | Charge control model; base transit time; Small signal model | |
| 22 | 10/20 | Cutoff frequency; transient response | |
| 23 | 10/25 | PNPN devices | |
| Metal Oxide Semiconductor (MOS) Capacitors (1 week) | |||
| 24 | 10/27 | MOS Structure; energy band diagram; Electrostatics | |
| 25 | 11/1 | No class | |
| 26 | 11/3 | Capacitance vs. voltage characteristic | |
| Metal Oxide Semiconductor (MOS) Field-Effect Transistors (FETs) (3 weeks) | |||
| 27 | 11/8 | MOSFET structure and operation; Qualitative theory; long-channel I-V characteristics | |
| 28 | 11/10 | Modified long-channel I-V characteristics; Body effect parameter; PMOS I-V; small-signal model | |
| 29 | 11/15 | Body effect parameter; PMOS I-V; small-signal model | |
| 30 | 11/17 | Sub-threshold leakage current; gate-length scaling; Velocity saturation | |
| 31 | 11/22 | Short-channel effect; source/drain structure; drain-induced barrier lowering; excess current effects | |
| 32 | 11/24 | IC technology; MOSFET fabrication process; CMOS latch-up | |
| 33 | 11/29 | Review | |
| 34 | 12/1 | Review |
Discussion Class Slides and Homework
| Title | Questions only | With solution | |
|---|---|---|---|
| DC 01 | Electromagnetics Review & Crystal Lattice Structures | ||
| DC 02 | Energy Band Model and Carrier Concentration I | ||
| DC 03 | Carrier Concentration II and Resistivity | ||
| HW 01 | Carrier Concentration to Current Drift | ||
| DC 04 | Carrier Drift and Band Bending | ||
| HW 02 | Band Bending, Carrier Transport | ||
| DC 05 | Band Bending, Carrier Transport | ||
| HW 03 | Continuity Equation | pdf (not updated, see corrections on piazza) | |
| DC 06 | Continuity Equation | ||
| HW 04 | Quasi-Fermi Levels, MS Electrostatics | pdf Note: In problem 2, if the resulting junction will have an ohmic behavior (i.e. not Schottky diode), you don't need to do b.i, b.ii, and b.iv for that junction. | |
| HW 05 | PN Junction Electrostatics | ||
| HW 06 | Non-Equilibrium PN Junction and Breakdown | pdf This HW will not be passed/checked. | |
| DC 07 | Quasi-Fermi Levels and MS Electrostatics | ||
| DC 08 | MS Small-Signal and PN Electrostatics | ||
| DC 09 | PN I-V and Breakdown | ||
| DC 10 | PN Small-signal and Transient | ||
| HW 07 | BJT Fundamentals | ||
| DC 11 | BJT Fundamentals | ||
| DC 12 | BJT Currents and Ebers-Moll Model | ||
| DC 13 | BJT Carrier Concentration and Non-idealities | ||
| DC 14 | BJT Small Signal and MOS Fundamentals | ||
| HW 08 | MOS C-V and MOSFET | ||
| DC 15 | MOS C-V and Field Effect Transistors (MOSFET) |
Textbook
- Semiconductor Device Fundamentals by R. F. Pierret (Addison Wesley, 1996)
References
- Solid State Electronic Devices by B. G. Streetman & S. Banerjee (Prentice Hall, 2000)
- Fundamentals of Modern VLSI Devices by Y. Taur & T. H. Ning (Cambridge University Press, 1998)
- Semiconductor Devices by K. Kano (Prentice Hall, 1998)
- Introduction to Semiconductor Devices and Circuits, 2nd ed., by L. Sison (U.P. Press, 2008)