- Introduction to Semiconductor Devices and Circuits
- Lecture Schedules:
- THD (Tue/Thu, 10:00am – 11:00am, Rm 120)
- WFD (Wed/Fri, 10:00am – 11:00am, Rm 120)
- Lecture/DC Instructors
- Christopher Santos (christopher.santos@eee.upd.edu.ph)
- Fredrick Angelo Galapon (fredrick.galapon@eee.upd.edu.ph)
- Ryan Albert Antonio (ryan.albert.antonio@eee.upd.edu.ph)
Announcements
- 8/6: Welcome to EEE 41!
- 8/6: You will need to be logged in to your EEE account to access the lecture slides.
- 8/19: Makeup class schedules for THD lecture class below. Attendance is not required. Those with conflict on both schedules are encouraged to ask for consultation.
- September 19 Thursday (1:00-2:30 pm, Rm 422)
- September 21 Saturday (1:00-2:30 pm, Rm 420)
- 9/27: Problem set 1 is now available. Deadline is on October 4, 2019 (5:00 pm).
- 10/21: Starting October 22, THD lecture class will meet at SC5 (Room 321).
- 11/11: For those with conflict on the second long exam schedule (November 16, 1-4pm), please answer the survey form on this LINK before November 14, 2019. Thanks!
- 12/08: For those with conflict on the third long exam schedule (Decemer 12, 9am-12nn), please answer the survey form on this LINK before by December 10, 2019. Thanks!
Exam Dates
- Exam 1: October 12, 2019 (1:00 pm – 4:00 pm)
- Special exam schedule(s) to follow.
- Solutions can be found here.
- Exam 2: November 16, 2019 (1:00 pm – 4:00 pm)
- Solutions can be found here.
- Exam 3: December 12, 2019 (9:00 am – 12:00 nn)
- Date and time is already final.
- Solutions can be found here.
Grades Distribution
- 75% – Exams
- 20% – DC Grade
- HW and Quizzes (10%)
- Problem Sets (8%)
- Recitation (2%)
- 5% – Attendance for Lecture and DC
Class Lectures
| Date | Title | Slides | ||
|---|---|---|---|---|
| 1 | 8/6 | Introduction | ||
| Semiconductor Fundamentals (3 weeks) | ||||
| 2 | 8/13 | Semiconductor materials; Si structure; Electrons and holes | ||
| 3 | 8/15 | Energy-band model; Band-gap energy; Density of states; Doping | ||
| 4 | 8/22 | Thermal equilibrium; Carrier distributions and Concentrations; Determination of the Fermi Energy | ||
| 5 | 8/29 | Carrier properties and drift; Carrier scattering; Drift current; Resistivity | ||
| 6 | 9/4 | Electrostatic potential; Carrier diffusion; Generation and recombination | ||
| 7 | 9/6 | Generation and recombination; Excess carrier concentrations; Minority Carrier Lifetime | ||
| 8 | 9/18 | Minority carrier lifetime; Continuity equations; Minority carrier diffusion; Quasi-Fermi levels | ||
| Metal-Semiconductor Contacts (1 week) | ||||
| 9 | 9/20 | Work function; metal-semiconductor band diagram; depletion width | ||
| 10 | 9/25 | I-V characteristics; Practical ohmic contacts; small-signal capacitance | ||
| PN Junction Diodes (3 weeks) | *topics not included in LE2 | |||
| 11 | 10/2 | Electrostatics | ||
| 12 | 10/11 | I-V characteristics | ||
| 13 | 10/18 | Reverse-bias current; reverse-bias breakdown | ||
| 14 | 10/24 | Deviations from the ideal: R-G current, series resistance, high-level injection; narrow-base diode | ||
| 15 | 10/29 | Charge control model; Small-signal model | ||
| 16 | - | Transient response*; diode applications* | ||
| 17 | 11/5 | Diode circuits | ||
| Bipolar Junction Transistors (3 weeks) | *topics not included in LE3 coverage | |||
| 18 | 11/7 | Introduction; BJT fundamentals | ||
| 19 | 11/12 | Ideal transistor analysis; Ebers-Moll model | ||
| 20 | 11/14 | Deviations from the ideal; Gummel plots* | ||
| 21 | 11/19 | Modern BJT structures*; Charge control model*; Base transit time | ||
| 22 | 11/19 | BJT Small signal model; Cutoff frequency; BJT transient response* | ||
| 23 | 11/21 | BJT biasing and sample circuits | ||
| Metal Oxide Semiconductor (MOS) Capacitors (1 week) | ||||
| 24 | 11/26 | MOS Structure; energy band diagram; Electrostatics | ||
| 25 | 11/28 | Capacitance vs. voltage characteristic | pdf1 pdf2 | |
| Metal Oxide Semiconductor (MOS) Field-Effect Transistors (FETs) (3 weeks) | ||||
| 26 | MOSFET structure and operation; Qualitative theory; long-channel I-V characteristics | |||
| 27 | MOSFET Circuit Analysis | |||
| Modified long-channel I-V characteristics; Body effect parameter; PMOS I-V; small-signal model | ||||
| Body effect parameter; PMOS I-V; small-signal model | ||||
| Sub-threshold leakage current; gate-length scaling; Velocity saturation | ||||
| MOS biasing and sample circuits | ||||
| Review for Exam#3 |
Discussion Class Slides
| Title | Questions only | With solution | |
|---|---|---|---|
| DC 00 | Introduction | ||
| DC 01 | Unit Cell & Miller Indices | ||
| DC 02 | Carrier Concentrations & Fermi Level | ||
| DC 02b | More Exercises | ||
| DC 03 | Drift Current | ||
| DC 04 | Carrier Diffusion and Band Bending | ||
| DC 05 | Minority Carrier Diffusion | ||
| DC 06 | MS Contacts | ||
| DC 07 | PN Junction: Electrostatics | ||
| DC 08 | PN I-V Characteristics | ||
| DC 09 | PN Non-idealities | ||
| DC 10 | Charge Control Model, Small-Signal Analysis, Diode Circuits | ||
| DC 11 | BJT Fundamentals | ||
| DC 12 | BJT Currents, Ebers-Moll Model, Non-idealities | ||
| DC 13 | BJT Circuit Analysis & MOS EBD | ||
| DC 14 | MOSFETs |
Homework
| Title | Questions only | With solution | |
|---|---|---|---|
| HW 01 | Lattice Structures, Carrier Concentrations & Resistivity | ||
| PS 01 | Semiconductor Materials to Continuity Equations | ||
| HW 02 | MS Contacts |
Textbook
- Semiconductor Device Fundamentals by R. F. Pierret (Addison Wesley, 1996)
References
- Modern Semiconductor Devices for Integrated Circuits by Chenming Hu (Prentice Hall, 2010)
- Solid State Electronic Devices by B. G. Streetman & S. Banerjee (Prentice Hall, 2000)
- Fundamentals of Modern VLSI Devices by Y. Taur & T. H. Ning (Cambridge University Press, 1998)
- Semiconductor Devices by K. Kano (Prentice Hall, 1998)
- Introduction to Semiconductor Devices and Circuits, 2nd ed., by L. Sison (U.P. Press, 2008)