- Introduction to Semiconductor Devices and Circuits
- Lecture Schedules:
- Tuesdays and Thursdays
- THA: 7am – 8am, LC1
- THI: 1pm – 2pm
- Wednesdays and Fridays
- WFI: 1pm – 2pm
- Tuesdays and Thursdays
Announcements
- 6/6: Welcome to EEE 41!
- 8/8: First Exam time is moved to 1pm – 4pm. Inform your instructors ASAP if you have a conflict.
- 8/16: Early first exam schedule is 10:30am – 1:30am. Only those who have informed their instructors will be allowed to take the early exam.
- 8/16: Early first exam venue is EEEI room 307.
- 8/27: THA students: Please take this survey for the make-up class schedule before 5pm on Thursday, 8/29.
- 8/29: THA students: Please take this new survey before 12pm on 8/30 (the old survey results have been deleted). The final schedule will be posted here by 5pm on 8/30.
- 8/30: We will have our make-up class on Saturday, 9/14 from 9am to 12pm. This time and date has been selected based on the results of the online class survey.
- 9/13: Our make-up class on 9/14 (Saturday) will be held at the Meralco MMLH (LC1), from 9am to 12pm.
- 10/8: Problem set available here. Use A4 sheets of paper for your answers. This problem set is graded. Deadline for submission will be on Oct 11, 2013, 12 noon. Solutions to the problems will be released afterwards.
- 10/9: First Exam Solutions
- 10/9: Problem set corrections: Problem 3.1 and 3.2. ND = 1.0 x 10^17 instead of 2 x 10^17. It is a P-type material.
- 10/11: Problem Set Solutions
- 10/12: Final exam postponed to Monday, October 14. Time is TBA. Check back later for the exam schedule.
- 10/13: Final exam schedule: Monday, 10/14, 9am-12nn (VLC, LC2). Early exam: 7:30am-10:30am (Rm 307).
- 10/22: Final grades can be viewed here. If you wish to see a more detailed breakdown of your grades or if there are errors in the spreadsheet, please contact your DC instructor
Exam Dates
- First Exam: Saturday, August 17, 2013, 1pm – 4pm (coverage is up to diode non-idealities)
- Final Exam: Saturday, October 12, 2013, 9am – 12pm
Class Lectures
| Date | Title | Slides | |
|---|---|---|---|
| 1 | 6/6 | Introduction | |
| Semiconductor Fundamentals (3 weeks) | |||
| 2 | 6/11 | Semiconductor materials; Si structure; Electrons and holes | |
| 3 | 6/13 | Energy-band model; Band-gap energy; Density of states; Doping | |
| 6/18 | No Class (UP Foundation Day) for THA | ||
| 4 | 6/20 | Thermal equilibrium; Carrier distributions and Concentrations; Determination of the Fermi Energy | |
| 6/25 | No Class for THA | ||
| 6/27 | No Class for THA | ||
| 5 | 7/2 | Carrier properties and drift; Carrier scattering; Drift current; Resistivity | |
| 6 | 7/4 | Carrier diffusion; Diffusion current; Generation and recombination | |
| 7 | 7/9 | Minority carrier lifetime; Continuity equations; Minority carrier diffusion; Quasi-Fermi levels | pdf pdf |
| Metal-Semiconductor Contacts (1 week) | |||
| 8 | 7/11 | Work function; metal-semiconductor band diagram; depletion width | |
| 9 | 7/16 | I-V characteristics; Practical ohmic contacts; small-signal capacitance | |
| PN Junction Diodes (3 weeks) | |||
| 10 | 7/18 | Electrostatics | |
| 11 | 7/23 | I-V characteristics | |
| 12 | 7/25 | Reverse-bias current; reverse-bias breakdown | |
| 13 | 7/30 | Deviations from the ideal: R-G current, series resistance, high-level injection; narrow-base diode | |
| 14 | 8/1 | Charge control model; Small-signal model; transient response: turn-off | |
| 15 | 8/6 | Transient response: turn-on; diode applications | |
| 16 | 8/8 | Review | |
| Bipolar Junction Transistors (3 weeks) | |||
| 17 | 8/13 | Introduction; BJT fundamentals | |
| 18 | 8/15 | Ideal transistor analysis; Ebers-Moll model | |
| 19 | 8/20 | Deviations from the ideal; Gummel plot; Modern BJT structures | |
| 20 | 8/22 | Charge control model; base transit time; Small signal model | |
| 21 | 8/27 | Cutoff frequency; transient response | |
| 22 | 8/29 | PNPN devices | Reading assignment (Ch 13) |
| Metal Oxide Semiconductor (MOS) Capacitors (1 week) | |||
| 23 | 9/3 | MOS Structure; energy band diagram; Electrostatics | |
| 24 | 9/5 | Capacitance vs. voltage characteristic | |
| Metal Oxide Semiconductor (MOS) Field-Effect Transistors (FETs) (3 weeks) | |||
| 25 | 9/10 | MOSFET structure and operation; Qualitative theory; long-channel I-V characteristics | |
| 26 | 9/12 | Modified long-channel I-V characteristics; Body effect parameter; PMOS I-V; small-signal model | |
| 27 | 9/17 | Body effect parameter; PMOS I-V; small-signal model | |
| 28 | 9/19 | Sub-threshold leakage current; gate-length scaling; Velocity saturation | |
| 29 | 9/24 | Short-channel effect; source/drain structure; drain-induced barrier lowering; excess current effects | |
| 30 | 9/26 | IC technology; MOSFET fabrication process; CMOS latch-up | |
| 31 | 10/1 | Review | |
| 32 | 10/3 | Review |
Discussion Class Slides and Homeworks
Textbook
- Semiconductor Device Fundamentals by R. F. Pierret (Addison Wesley, 1996)
References
- Solid State Electronic Devices by B. G. Streetman & S. Banerjee (Prentice Hall, 2000)
- Fundamentals of Modern VLSI Devices by Y. Taur & T. H. Ning (Cambridge University Press, 1998)
- Semiconductor Devices by K. Kano (Prentice Hall, 1998)
- Introduction to Semiconductor Devices and Circuits, 2nd ed., by L. Sison (U.P. Press, 2008)