- Introduction to Semiconductor Devices and Circuits
- Lecture Schedules:
- THA: Tue/Thu, 7-8am (DC: T2:Tue 2:45-3:45pm, T3:Tue 4-5pm, H2&H3:Thu 4-5pm)
- THD: Tue/Thu, 10-11am (DC: W2:Wed 4-5pm, H1:Thu 2:45-3:45pm, F2&F3:Fri 4-5pm)
- WFD: Wed/Fri, 10-11am (DC: T1:Tue 1:30-2:30pm, W1:Wed 2:45-3:45pm, F1:Fri 2:45-3:45pm)
Announcements
- 8/7: Welcome to EEE 41!
- 8/14: EEE 41 grades can be found here.
- 8/19: No DC on Friday (Aug. 22) for WFDF1, THDF2 and THDF3.
- EEE41 WFD
- Midterm Exam Solutions:
- 11/24: Makeup class today (THA), Monday, 11/24, 4pm, Rm 120.
- 12/07: Due to the suspension of classes tomorrow, the makeup class (THA) will be moved to either Tuesday or Wednesday, after 2pm. Please keep those time slots open and wait for further announcements.
- 12/10: Make-up class (THA) today: 4pm-5:30pm, Rm 120.
- Final Exam Solutions:
- 01/04: Final exam papers can be redeemed at Rm 407 starting tomorrow. Just look for Sir Chito.
- 01/06: Deadline for submission of papers (finals) for rechecking is tomorrow (January 7) 5pm.
- 01/08: We are targeting to finish the rechecking and to finalize the grades by Friday (January 9) night. The passing grade is 51.
- 01/10: We’ll upload the grades on Monday evening (assuming the results for rechecking will be given to us this weekend). You can always get any unclaimed papers in Rm 407. For finals rechecking, please approach the checker and explain your case. Also, only requests for recount will be entertained by the DC instructors until Monday, 5PM.
- 01/12: We won’t be able to upload the grades today since we’re still waiting for the remaining rechecking results. Grades will be uploaded tomorrow evening IF the results are released tomorrow morning.
- 01/13: For those who need their grades in CRS for scholarship tagging (or any other needs), you may approach your DC instructor to have your grade uploaded. However, this means that any additional points that you might get from the remaining parts will never be considered. For those who need to prove to their advisers that they’ve already passed the course, you may show them the grade sheet. UPDATE: For those who are not waiting anymore (see grade sheet), we’ll upload your grades tonight.
Exam Dates
- First Exam: Saturday, October 25, 2014, 9am-12nn
- Final Exam: Saturday, December 13, 2014, 9am-12nn
Class Lectures
| Date | Title | Slides | |
|---|---|---|---|
| 1 | 8/7 | Introduction | |
| Semiconductor Fundamentals (3 weeks) | |||
| 2 | 8/12 | Semiconductor materials; Si structure; Electrons and holes | |
| 3 | 8/14 | Energy-band model; Band-gap energy; Density of states; Doping | |
| 8/19 | No Class (Quezon City Day) | ||
| 8/21 | No Class (Ninoy Aquino Day) | ||
| 4 | 8/26 | Thermal equilibrium; Carrier distributions and Concentrations; Determination of the Fermi Energy | |
| 5 | 8/28 | Thermal equilibrium; Carrier distributions and Concentrations; Determination of the Fermi Energy | |
| 6 | 9/2 | Carrier properties and drift; Carrier scattering; Drift current; Resistivity | |
| 7 | 9/4 | Carrier diffusion; Diffusion current; Generation and recombination | |
| 8 | 9/9 | Minority carrier lifetime; Continuity equations; Minority carrier diffusion; Quasi-Fermi levels | pdf |
| Metal-Semiconductor Contacts (1 week) | |||
| 9 | 9/11 | Work function; metal-semiconductor band diagram; depletion width | |
| 10 | 9/16 | I-V characteristics; Practical ohmic contacts; small-signal capacitance | |
| PN Junction Diodes (3 weeks) | |||
| 11 | 9/18 | Electrostatics | |
| 12 | 9/23 | I-V characteristics | |
| 13 | 9/25 | Reverse-bias current; reverse-bias breakdown | |
| 14 | 9/30 | Deviations from the ideal: R-G current, series resistance, high-level injection; narrow-base diode | |
| 15 | 10/2 | Charge control model; Small-signal model; transient response: turn-off | |
| 16 | 10/7 | Transient response: turn-on; diode applications | |
| 17 | 10/9 | Review | |
| Bipolar Junction Transistors (3 weeks) | |||
| 18 | 10/14 | Introduction; BJT fundamentals | |
| 19 | 10/16 | Ideal transistor analysis; Ebers-Moll model | |
| 20 | 10/21 | Deviations from the ideal; Gummel plot; Modern BJT structures | |
| 21 | 10/23 | Charge control model; base transit time; Small signal model | |
| 22 | 10/28 | Cutoff frequency; transient response | |
| 23 | 10/30 | PNPN devices | |
| Metal Oxide Semiconductor (MOS) Capacitors (1 week) | |||
| 24 | 11/4 | MOS Structure; energy band diagram; Electrostatics | |
| 25 | 11/6 | Capacitance vs. voltage characteristic | |
| Metal Oxide Semiconductor (MOS) Field-Effect Transistors (FETs) (3 weeks) | |||
| 26 | 11/11 | MOSFET structure and operation; Qualitative theory; long-channel I-V characteristics | |
| 27 | 11/13 | Modified long-channel I-V characteristics; Body effect parameter; PMOS I-V; small-signal model | |
| 28 | 11/18 | Body effect parameter; PMOS I-V; small-signal model | |
| 29 | 11/20 | Sub-threshold leakage current; gate-length scaling; Velocity saturation | |
| 30 | 11/25 | Short-channel effect; source/drain structure; drain-induced barrier lowering; excess current effects | |
| 31 | 11/27 | IC technology; MOSFET fabrication process; CMOS latch-up | |
| 32 | 12/2 | Review | |
| 33 | 12/4 | Review |
Discussion Class Slides and Homeworks
| Title | Slides (no solution) | Slides (w/solution) | Quiz (w/ sol'n) | |
|---|---|---|---|---|
| 00 | Class Policies | |||
| 01 | Electromagnetics Review & Crystal Lattice Structures | |||
| 02 - 03 | Energy Band Model and Carrier Concentration | |||
| 04 | Carrier Concentration and Current Drift | |||
| 05 | Band Bending and Carrier Diffusion | |||
| 06 | Carrier Transport and Continuity Equations | |||
| 07 | Continuity Equations | |||
| LQ1 | Long Quiz 1 | |||
| 08 | Quasi-Fermi Level | |||
| 09 | MS Junctions | |||
| 10 | PN Electrostatics, I-V Characteristics and Carrier Concentration | |||
| 11 | PN Carrier Concentration and Breakdown | |||
| PS1 | Problem Set 1 Errata: a) In problem 1, tau_p should be tau_n. b) In problem 2.f, it should be "Draw the charge density" instead of "Draw the energy density." c) In problem 2.g, the units of the mobilities should be cm^2 / V-sec. Also, assume tau_n = tau_p = 1 usec. d) In problem 3.g, it should be "NA 10x larger" instead of "ND 10x larger." e) Problems 3a-3f are all worth 1pt while 3g is worth 2pts. f) Each item under problem 4 would be scored as follows (from a to g): 2, 1.5, 1, 2, 2.5, 1, and 2. g) Scoring for problem 1.d and 1.g will be changed to 3pts and 5pts, respectively. Last edited: Sun, Oct. 19, 2014, 9:02AM | Problem 1 and 2 Solution Problem 3 and 4 Solution |
||
| 12 | PN Non-Idealities, Small Signal Model, and Transient | |||
| 13 | BJT Fundamentals and Static Characteristics | |||
| 14 | BJT Biasing and Breakdown | |||
| 15 | BJT Small Signal and MOS Capacitors | |||
| LQ2 | Long Quiz 2 |
Textbook
- Semiconductor Device Fundamentals by R. F. Pierret (Addison Wesley, 1996)
References
- Solid State Electronic Devices by B. G. Streetman & S. Banerjee (Prentice Hall, 2000)
- Fundamentals of Modern VLSI Devices by Y. Taur & T. H. Ning (Cambridge University Press, 1998)
- Semiconductor Devices by K. Kano (Prentice Hall, 1998)
- Introduction to Semiconductor Devices and Circuits, 2nd ed., by L. Sison (U.P. Press, 2008)